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Two‐ and Three‐Terminal Resistive Switches: Nanometer‐Scale Memristors and Memistors
Author(s) -
Xia Qiangfei,
Pickett Matthew D.,
Yang J. Joshua,
Li Xuema,
Wu Wei,
MedeirosRibeiro Gilberto,
Williams R. Stanley
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201100180
Subject(s) - memristor , materials science , terminal (telecommunication) , resistor , memistor , resistive random access memory , nanoimprint lithography , nanoscopic scale , lithography , footprint , nanometre , nanotechnology , optoelectronics , resistive touchscreen , crossbar switch , voltage , electrical engineering , fabrication , computer science , composite material , medicine , telecommunications , paleontology , alternative medicine , pathology , biology , engineering
Abstract The logical relationship between two previously defined “memory resistors” is revealed by constructing and experimentally demonstrating a three‐terminal memistor equivalent circuit using two two‐terminal memristors. A technique is then presented, using nanoimprint lithography in combination with angle evaporation, to fabricate a single nanoscale device with a footprint of 4F 2 , where F is the minimum lithographic feature size, that can be operated as either a two‐terminal lateral memristor or a three‐terminal memistor inside a crossbar structure. These devices exhibit repeatable bipolar nonvolatile switching behavior with up to 10 3 ON/OFF conductance ratios, as well as the desired three‐terminal behavior.