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Organic Field‐Effect Transistors: Planarization of Polymeric Field‐Effect Transistors: Improvement of Nanomorphology and Enhancement of Electrical Performance (Adv. Funct. Mater. 14/2010)
Author(s) -
Singh Kumar A.,
Young Tomasz,
McCullough Richard D.,
Kowalewski Tomasz,
Porter Lisa M.
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201090061
Subject(s) - materials science , chemical mechanical planarization , transistor , contact resistance , field effect transistor , optoelectronics , electrode , nanotechnology , organic field effect transistor , electrical engineering , voltage , layer (electronics) , chemistry , engineering
Contact geometry plays an important role in charge injection and transport in organic field‐effect transistors. On page 2216 , T. Kowalewski, L. M. Porter, et al. show a dramatic effect of electrode planarization on the polymer morphology at the contact edges and a resulting increase in fi eld‐effect mobility in short channel length devices, and a corresponding decrease in contact resistance. The cover image shows atomic force micrograph of individual polymer nanofi brils spanning the length of a 10 µm channel transistor with planarized contacts.