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Nanowires: Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials (Adv. Funct. Mater. 14/2010)
Author(s) -
Nedelcu Mihaela,
Saifullah Mohammad S. M.,
Hasko David G.,
Jang Arang,
Anderson David,
Huck Wilhelm T. S.,
Jones Geraint A. C.,
Welland Mark E.,
Kang Dae Joon,
Steiner Ullrich
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201090059
Subject(s) - materials science , metal , surface finish , line width , line (geometry) , cathode ray , fabrication , surface roughness , hydrogen , nanowire , electron beam lithography , nanotechnology , electron , optoelectronics , optics , composite material , metallurgy , resist , medicine , chemistry , physics , geometry , mathematics , alternative medicine , organic chemistry , pathology , quantum mechanics , layer (electronics)
This computer rendered graphic displays direct writing of sub‐10 nm metallic wires of low line‐width roughness using an electron beam (shown as a sinusoidal wave), as presented by M. S. M. Saifullah, D. J. Kang, U. Steiner, et al. on page 2317 . Sub‐10 nm metallic wires of good integrity and low line‐width roughness were obtained by reducing electron‐beam patterned metal naphthenate lines in a hydrogen‐rich atmosphere at 500°C for 1 h.