Premium
Temperature Performance of Doping‐Free Top‐Gate CNT Field‐Effect Transistors: Potential for Low‐ and High‐Temperature Electronics
Author(s) -
Pei Tian,
Zhang Zhiyong,
Wang Zhenxing,
Ding Li,
Wang Sheng,
Peng LianMao
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201002563
Subject(s) - materials science , dopant , doping , optoelectronics , carbon nanotube , field effect transistor , nanotechnology , transistor , electrical engineering , voltage , engineering
High‐performance top‐gate carbon nanotube (CNT) field‐effect transistors (FETs) have been fabricated via a doping‐free fabrication process in which the polarity of the CNT FET is controlled by the injection of carriers from the electrodes, instead of using dopants. The performance of the doping‐free CNT FETs is systemically investigated over a wide temperature range, from very low temperatures of down to 4.3 K up to 573 K, and analyzed using several temperature‐dependent key device parameters including the ON/OFF state current and ratio, carrier mobility, and subthreshold swing. It is demonstrated that for ballistic and quasi‐ballistic CNT FETs, the operation of the CNT FETs is largely independent of the presence of dopant, thus avoiding detrimental effects due to dopant freeze‐out at low temperature and dopant diffusion at high temperature, and making it possible to use doping‐free CNT FETs in both low‐ and high‐temperature electronics. A new method is also proposed for extracting the band‐gap and diameter of a semiconducting CNT from the temperature dependent OFF‐state current and shown to yield results that are consistent with AFM measurements.