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An Electrically Tuned Solid‐State Thermal Memory Based on Metal–Insulator Transition of Single‐Crystalline VO 2 Nanobeams
Author(s) -
Xie Rongguo,
Bui Cong Tinh,
Varghese Binni,
Zhang Qingxin,
Sow Chorng Haur,
Li Baowen,
Thong John T. L.
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201002436
Subject(s) - materials science , thermal , thermal conduction , hysteresis , realization (probability) , voltage , insulator (electricity) , metal–insulator transition , optoelectronics , solid state , single crystal , condensed matter physics , shape memory alloy , metal , composite material , engineering physics , thermodynamics , electrical engineering , nuclear magnetic resonance , statistics , physics , mathematics , engineering , metallurgy
A solid‐state thermal memory that can store and retain thermal information with temperature states as input and output is demonstrated experimentally. A single‐crystal VO 2 nanobeam is used, undergoing a metal–insulator transition at ∼340 K, to obtain a nonlinear and hysteresis response in temperature. It is shown that the application of a voltage bias can substantially tune the characteristics of the thermal memory, to an extent that the heat conduction can be increased ∼60%, and the output HIGH/LOW temperature difference can be amplified over two orders of magnitude compared to an unbiased device. The realization of a solid‐state thermal memory combined with an effective electrical control thus allows the development of practical thermal devices for nano‐ to macroscale thermal management.