Premium
Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications
Author(s) -
Kim Se Hyun,
Jang Mi,
Yang Hoichang,
Anthony John E.,
Park Chan Eon
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201002054
Subject(s) - materials science , dielectric , organic field effect transistor , oxide , polymer , hysteresis , polystyrene , semiconductor , organic semiconductor , field effect transistor , transistor , chemical engineering , optoelectronics , nanotechnology , voltage , composite material , electrical engineering , physics , quantum mechanics , metallurgy , engineering
A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO 2 or AlO x dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities ( μ FET s) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlO x nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with μ FET ∼ 1.26 cm 2 V −1 s −1 at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO 2 dielectric.