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Stretchable, Transparent Zinc Oxide Thin Film Transistors
Author(s) -
Park Kyungyea,
Lee DeokKyou,
Kim ByungSung,
Jeon Haseok,
Lee NaeEung,
Whang Dongmok,
Lee HooJeong,
Kim Youn Jea,
Ahn JongHyun
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201001107
Subject(s) - materials science , thin film transistor , fabrication , optoelectronics , flexible display , annealing (glass) , transistor , semiconductor , oxide , natural rubber , thin film , nanotechnology , composite material , electrical engineering , metallurgy , layer (electronics) , medicine , alternative medicine , engineering , pathology , voltage
Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor‐based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.