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High T g Cyclic Olefin Copolymer Gate Dielectrics for N , N ′‐Ditridecyl Perylene Diimide Based Field‐Effect Transistors: Improving Performance and Stability with Thermal Treatment
Author(s) -
Jang Jaeyoung,
Nam Sooji,
Chung Dae Sung,
Kim Se Hyun,
Yun Won Min,
Park Chan Eon
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201000383
Subject(s) - materials science , diimide , pentacene , thermal stability , dielectric , gate dielectric , perylene , organic field effect transistor , annealing (glass) , electron mobility , crystallinity , optoelectronics , field effect transistor , octadecyltrichlorosilane , thin film transistor , transistor , chemical engineering , nanotechnology , silicon , organic chemistry , composite material , layer (electronics) , electrical engineering , chemistry , molecule , engineering , voltage
A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated N , N′ ‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO 2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO 2 gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm 2 V −1 s −1 in the 20 V saturation regime and long‐term stability with respect to H 2 O/O 2 degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.