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Stable, Glassy, and Versatile Binaphthalene Derivatives Capable of Efficient Hole Transport, Hosting, and Deep‐Blue Light Emission
Author(s) -
Wei Bin,
Liu JiZhong,
Zhang Yong,
Zhang JianHua,
Peng HuaNan,
Fan HeLiang,
He YanBo,
Gao XiCun
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201000299
Subject(s) - oled , materials science , electroluminescence , deep blue , optoelectronics , amorphous solid , diode , layer (electronics) , blue light , flat panel , nanotechnology , optics , photochemistry , crystallography , chemistry , physics
Organic light‐emitting diodes (OLEDs) have great potential applications in display and solid‐state lighting. Stability, cost, and blue emission are key issues governing the future of OLEDs. The synthesis and photoelectronics of a series of three kinds of binaphthyl (BN) derivatives are reported. BN 1–3 are “melting‐point‐less” and highly stable materials, forming very good, amorphous, glass‐like films. They decompose at temperatures as high as 485–545 °C. At a constant current density of 25 mA cm −2 , an ITO/BN 3 /Al single‐layer device has a much‐longer lifetime (>80 h) than that of an ITO/NPB/Al single‐layer device (8 h). Also, the lifetime of a multilayer device based on BN 1 is longer than a similar device based on NPB. BNs are efficient and versatile OLED materials: they can be used as a hole‐transport layer (HTL), a host, and a deep‐blue‐light‐emitting material. This versatility may cut the cost of large‐scale material manufacture. More importantly, the deep‐blue electroluminescence (emission peak at 444 nm with CIE coordinates (0.16, 0.11), 3.23 cd A −1 at 0.21 mA cm −2 , and 25200 cd m −2 at 9 V) remains very stable at very high current densities up to 1000 mA cm −2 .