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Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures
Author(s) -
Hambe Michael,
Petraru Adrian,
Pertsev Nikolay A.,
Munroe Paul,
Nagarajan Valanoor,
Kohlstedt Hermann
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201000265
Subject(s) - ferroelectricity , materials science , quantum tunnelling , heterojunction , condensed matter physics , ferromagnetism , magnetoresistance , oxide , polarization (electrochemistry) , electric field , tunnel junction , ionic bonding , tunnel magnetoresistance , magnetic field , optoelectronics , ion , physics , dielectric , chemistry , quantum mechanics , metallurgy
Experimental results on entirely complex oxide ferromagnetic/ferroelectric/ferromagnetic tunnel junctions are presented in which the tunneling magnetoresistance is modified by applying low electric field pulses to the junctions. The experiments indicate that ionic displacements associated with the polarization reversal in the ferroelectric barrier affect the complex band structure at ferromagnetic–ferroelectric interfaces. The results are discussed in the framework of the theoretically predicted magnetoelectric interface effect and may lead to novel multistate memory devices.