Transistors: (Adv. Funct. Mater. 10/2009)

The inside cover picture shows ZnO‐based thin‐film transistors, grown at room temperature, integrated with a one‐diode one‐resistor (1D–1R) oxide‐storage node elements, fabricated at room temperature. These stacked structures with stackable peripheral circuits offer the possibility of becoming a new building block applicable to high‐density non‐volatile memory devices with three‐dimensionally stackable cross‐point structures. Such an effective stacked memory concept utilizing an all‐oxide‐based device with peripheral circuits is necessary for future high‐density non‐volatile data storage.