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Thin‐Film Transistors: Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer (Adv. Funct. Mater. 5/2009)
Author(s) -
Oh Min Suk,
Lee Kimoon,
Lee Kwang H.,
Cha Sung Hoon,
Choi Jeong Min,
Lee Byoung H.,
Sung Myung M.,
Im Seongil
Publication year - 2009
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200990015
Subject(s) - materials science , pentacene , thin film transistor , optoelectronics , inverter , transistor , dielectric , gate dielectric , layer (electronics) , fabrication , capacitance , nanotechnology , nanometre , thin film , active layer , electrode , electrical engineering , composite material , voltage , medicine , chemistry , alternative medicine , engineering , pathology
On page 726 , Minsuk Oh and co‐workers describe the fabrication of a transparent complementary thin‐film transistor inverter with a ZnO top gate and bottom gate of pentacene channels. Twelve nanometer‐thin organic–inorganic hybrid dielectric layers with high capacitance are adopted to allow the ZnO and pentacene transistors to operate under only 3 V, and the inverter action appears very stable even under a few mW of white light. This discovery could herald the arrival of a new type of transparent logic device.