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Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Author(s) -
Yoon SungMin,
Yang Shinhyuk,
Byun Chunwon,
Park SangHee K.,
Cho DooHee,
Jung SoonWon,
Kwon OhSang,
Hwang ChiSun
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200902095
Subject(s) - materials science , optoelectronics , ferroelectricity , transistor , non volatile memory , threshold voltage , thin film transistor , fabrication , thin film , transmittance , substrate (aquarium) , oxide , voltage , nanotechnology , layer (electronics) , electrical engineering , medicine , oceanography , alternative medicine , pathology , geology , dielectric , engineering , metallurgy
A fully transparent non‐volatile memory thin‐film transistor (T‐MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride‐trifluoroethylene) [P(VDF‐TrFE)] and oxide semiconducting Al‐Zn‐Sn‐O (AZTO) layers, in which thin Al 2 O 3 is introduced between two layers. All the fabrication processes are performed below 200 °C on the glass substrate. The transmittance of the fabricated device was more than 90% at the wavelength of 550 nm. The memory window obtained in the T‐MTFT was 7.5 V with a gate voltage sweep of −10 to 10 V, and it was still 1.8 V even with a lower voltage sweep of −6 to 6 V. The field‐effect mobility, subthreshold swing, on/off ratio, and gate leakage currents were obtained to be 32.2 cm 2 V −1 s −1 , 0.45 V decade −1 , 10 8 , and 10 −13 A, respectively. All these characteristics correspond to the best performances among all types of non‐volatile memory transistors reported so far, although the programming speed and retention time should be more improved.