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Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory
Author(s) -
Baeg KangJun,
Noh YongYoung,
Sirringhaus Henning,
Kim DongYu
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200901677
Subject(s) - materials science , transistor , threshold voltage , optoelectronics , thin film transistor , flash memory , amorphous solid , nanotechnology , organic field effect transistor , voltage , polymer , non volatile memory , polystyrene , nanoparticle , organic electronics , field effect transistor , layer (electronics) , electrical engineering , computer science , chemistry , organic chemistry , composite material , engineering , operating system
Organic field‐effect transistor (FET) memory is an emerging technology with the potential to realize light‐weight, low‐cost, flexible charge storage media. Here, solution‐processed poly[9,9‐dioctylfluorenyl‐2,7‐diyl]‐co‐(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top‐gate/bottom‐contact device configuration is reported. A reversible shift in the threshold voltage ( V Th ) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross‐linked poly(4‐vinylphenol). The F8T2 NFGM showed relatively high field‐effect mobility ( µ FET ) (0.02 cm 2 V −1 s −1 ) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10 4 ) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top‐gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.