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Polymer Field‐Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate
Author(s) -
Voigt Monika M.,
Guite Alexander,
Chung DaeYoung,
Khan Rizwan U. A.,
Campbell Alasdair J.,
Bradley Donal D. C.,
Meng Fanshun,
Steinke Joachim H. G.,
Tierney Steve,
McCulloch Iain,
Penxten Huguette,
Lutsen Laurence,
Douheret Olivier,
Manca Jean,
Brokmann Ulrike,
Sönnichsen Karin,
Hülsenberg Dagmar,
Bock Wolfgang,
Barron Cecile,
Blanckaert Nicolas,
Springer Simon,
Grupp Joachim,
Mosley Alan
Publication year - 2010
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200901597
Subject(s) - materials science , printed electronics , inkwell , contact print , polymer , optoelectronics , indium tin oxide , field effect transistor , transistor , nanotechnology , thin film transistor , insulator (electricity) , substrate (aquarium) , composite material , layer (electronics) , electrical engineering , engineering , oceanography , voltage , geology
The mass production technique of gravure contact printing is used to fabricate state‐of‐the art polymer field‐effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravure‐printed: the semiconductor poly(3‐hexylthiophene‐2,5‐diyl) (P3HT), two insulator layers, and an Ag gate. A crosslinkable insulator and an Ag ink are developed which are both printable and highly robust. Printing in ambient and using this bottom‐contact/top‐gate geometry, an on/off ratio of >10 4 and a mobility of 0.04 cm 2 V −1 s −1 are achieved. This rivals the best top‐gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min −1 on a flexible polymer substrate demonstrates that very high‐volume, reel‐to‐reel production of organic electronic devices is possible.