Premium
Inside Front Cover: Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics (Adv. Funct. Mater. 17/2008)
Author(s) -
Ahn JongHyun,
Zhu Zhengtao,
Park SangIl,
Xiao Jianliang,
Huang Yonggang,
Rogers John A.
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200890067
Subject(s) - materials science , transistor , semiconductor , nanotechnology , optoelectronics , nanomechanics , schematic , nanomaterials , dielectric , pinhole (optics) , interconnection , atomic force microscopy , electrical engineering , optics , voltage , engineering , computer network , physics , computer science
The mechanics of solid nanostructures – ribbons, wires, membranes – can be important for their use in electronic and related systems. This colorized scanning electron microscopy image illustrates the ability of nanoribbons to span open trenches as discussed by Ahn et al. on page 2535 . This behavior leads to improved electronic properties in transistors that incorporate gate dielectrics with pinhole or related defects, as shown in the inset data and schematic illustration.