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Imaging the Electric‐Field Distribution in Organic Devices by Confocal Electroreflectance Microscopy
Author(s) -
Celebrano Michele,
Sciascia Calogero,
Cerullo Giulio,
ZavelaniRossi Margherita,
Lanzani Guglielmo,
CabanillasGonzalez Juan
Publication year - 2009
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200801264
Subject(s) - electric field , materials science , stark effect , spectroscopy , field (mathematics) , optics , organic semiconductor , microscopy , reflection (computer programming) , confocal , semiconductor , optoelectronics , physics , quantum mechanics , pure mathematics , mathematics , computer science , programming language
Space resolved Stark spectroscopy is introduced as a non invasive optical technique for imaging electric field distribution in organic semiconductors. Stark spectroscopy relies on the electric field induced change in the absorption/reflection. It is shown that local monitoring of Stark shift with confocal spatial resolution provides quantitative information on the strength of the local field as well as charge distribution within the transport channel.

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