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Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory
Author(s) -
Lee MyoungJae,
Kim Sun I.,
Lee Chang B.,
Yin Huaxiang,
Ahn SeungEon,
Kang Bo S.,
Kim Ki H.,
Park Jae C.,
Kim Chang J.,
Song Ihun,
Kim Sang W.,
Stefanovich Genrikh,
Lee Jung H.,
Chung Seok J.,
Kim Yeon H.,
Park Youngsoo
Publication year - 2009
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200801032
Subject(s) - materials science , optoelectronics , non blocking i/o , transistor , oxide , fabrication , non volatile memory , layer (electronics) , x ray photoelectron spectroscopy , diode , heterojunction , sputtering , nanotechnology , thin film , electrical engineering , chemical engineering , metallurgy , voltage , medicine , biochemistry , chemistry , alternative medicine , pathology , engineering , catalysis
An effective stacked memory concept utilizing all‐oxide‐based device components for future high‐density nonvolatile stacked structure data storage is developed. GaInZnO (GIZO) thin‐film transistors, grown at room temperature, are integrated with one‐diode (CuO/InZnO)–one‐resistor (NiO) (1D–1R) structure oxide storage node elements, fabricated at room temperature. The low growth temperatures and fabrication methods introduced in this paper allow the demonstration of a stackable memory array as well as integrated device characteristics. Benefits provided by low‐temperature processes are demonstrated by fabrication of working devices over glass substrates. Here, the device characteristics of each individual component as well as the characteristics of a combined select transistor with a 1D–1R cell are reported. X‐ray photoelectron spectroscopy analysis of a NiO resistance layer deposited by sputter and atomic layer deposition confirms the importance of metallic Ni content in NiO for bi‐stable resistance switching. The GIZO transistor shows a field‐effect mobility of 30 cm 2 V −1 s −1 , a V th of +1.2 V, and a drain current on/off ratio of up to 10 8 , while the CuO/InZnO heterojunction oxide diode has forward current densities of 2 × 10 4 A cm −2 . Both of these materials show the performance of state‐of‐the‐art oxide devices.