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Organic Light‐Emitting Diodes with Field‐Effect‐Assisted Electron Transport Based on α‐bi; , ω‐bi; ‐Diperfluorohexyl‐quaterthiophene
Author(s) -
Schols Sarah,
McClatchey Christina,
Rolin Cédric,
Bode Dieter,
Genoe Jan,
Heremans Paul,
Facchetti Antonio
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200800641
Subject(s) - materials science , oled , optoelectronics , diode , electron , electron transport chain , layer (electronics) , light emitting diode , transistor , organic semiconductor , active layer , thin film transistor , nanotechnology , chemistry , electrical engineering , physics , biochemistry , engineering , quantum mechanics , voltage
Materials commonly used in the carrier transport layers of organic light‐emitting diodes, where transport occurs through the bulk, are in general very different from materials used in organic field‐effect transistors, where transport takes place in a very thin accumulation channel. In this paper, the use of a high‐performance electron‐conducting field‐effect transistor material, diperfluorohexyl‐substituted quaterthiophene (DFH‐4T), as the electron‐transporting material in an organic light‐emitting diode structure is investigated. The organic light‐emitting diode has an electron accumulation layer in DFH‐4T at the organic hetero‐interface with the host of the light‐emitting layer, tris(8‐hydroxyquinoline) aluminum (Alq 3 ). This electron accumulation layer is used to transport electrons and inject them into the active emissive host‐guest layer. By optimizing the growth conditions of DFH‐4T for electron transport at the organic hetero‐interface, high electron current densities of 750 A cm −2 are achieved in this innovative light‐emitting structure.