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High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Author(s) -
Joyce Hannah J.,
Gao Qiang,
Tan H. Hoe,
Jagadish Chennupati,
Kim Yong,
Fickenscher Melodie A.,
Perera Saranga,
Hoang Thang Ba,
Smith Leigh M.,
Jackson Howard E.,
YarrisonRice Jan M.,
Zhang Xin,
Zou Jin
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200800625
Subject(s) - nanowire , materials science , chemical vapor deposition , arsine , nanotechnology , planar , dopant , optoelectronics , vapor–liquid–solid method , doping , catalysis , computer graphics (images) , computer science , biochemistry , chemistry , phosphine
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle‐catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire‐based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III–V nanowires.