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Taming the Mott Transition for a Novel Mott Transistor
Author(s) -
Inoue Isao H.,
Rozenberg Marcelo J.
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200800558
Subject(s) - mott transition , mott insulator , materials science , condensed matter physics , metal–insulator transition , phase transition , strongly correlated material , transistor , electronics , electron , physics , electrical engineering , quantum mechanics , superconductivity , metal , voltage , metallurgy , hubbard model , engineering
The exploitation of a purely electronic phase change such as the Mott transition could lead to the ultimate electronic device. C. Vaju et al. demonstrates electric‐pulse control of the Mott transition in a sulfide (see figure). In this highlight, this breakthrough is reviewed with a brief tutorial of the Mott transition. The future of electronics with the strongly correlated electron systems is envisioned.