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Selective Patterned Growth of Single‐Crystal Ag–TCNQ Nanowires for Devices by Vapor–Solid Chemical Reaction
Author(s) -
Xiao Kai,
Tao Jing,
Puretzky Alex A.,
Ivanov Ilia N.,
Retterer Scott T.,
Pennycook Stephen J.,
Geohegan David B.
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200800430
Subject(s) - nanowire , materials science , chemical vapor deposition , vapor–liquid–solid method , selected area diffraction , nanotechnology , tetracyanoquinodimethane , single crystal , chemical engineering , crystal (programming language) , molecule , transmission electron microscopy , crystallography , organic chemistry , chemistry , programming language , computer science , engineering
We report the deterministic growth of individual single‐crystal organic semiconductor nanowires of silver–tetracyanoquinodimethane (Ag–TCNQ) with high yield (>90%) by a vapor–solid chemical reaction process. Ag–metal films or patterned dots deposited onto substrates serve as chemical reaction centers and are completely consumed during the growth of the individual or multiple nanowires. Selective‐area electron diffraction (SAED) revealed that the Ag–TCNQ nanowires grow preferentially along the strong π – π stacking direction of Ag–TCNQ molecules. The vapor–solid chemical reaction process described here permits the growth of organic nanowires at lower temperatures than chemical vapor deposition (CVD) of inorganic nanowires. The single‐crystal Ag–TCNQ nanowires are shown to act as memory switches with high on/off ratios, making them potentially useful in optical storage, ultrahigh‐density nanoscale memory, and logic devices.