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The Role of the Interface in CO Oxidation on Au/CeO 2 Multilayer Nanotowers
Author(s) -
Zhou Zheng,
Kooi Steven,
FlytzaniStephanopoulos Maria,
Saltsburg Howard
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200800025
Subject(s) - materials science , nanometre , diffraction , wafer , layer (electronics) , drop (telecommunication) , chemical vapor deposition , analytical chemistry (journal) , chemical engineering , nanotechnology , composite material , optics , telecommunications , chemistry , physics , engineering , chromatography , computer science
The CO oxidation reaction is studied in this work using a controlled structure consisting of Au/CeO 2 multilayers, in the form of towers of 10 × 10 µm 2 base, with layer thicknesses in the nanometer range. This structure is prepared on a 3″ Si wafer using reverse photolithography and vapor deposition in an e‐beam chamber. The thickness of each layer is of nanometer dimensions and only the edges of the Au and CeO 2 layers are exposed to the reaction gas mixture. The CO oxidation reaction rate is found to scale with the total length of the Au/CeO 2 interfaces for nanotowers with the same total Au and CeO 2 surface areas. TEM and X‐ray diffraction (XRD) analyses reveal highly stressed gold films in the nanotowers, the lattice strain being temperature and film thickness dependent. Deactivation with time‐on‐stream is commensurate with relaxation of the gold films, as measured by a drop in their lattice strain.