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High‐Performance, Low‐Operating‐Voltage Organic Field‐Effect Transistors with Low Pinch‐Off Voltages
Author(s) -
Wu Weiping,
Liu Yunqi,
Wang Ying,
Xi Hongxia,
Gao Xike,
Di Chongan,
Yu Gui,
Xu Wei,
Zhu Daoben
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200701125
Subject(s) - materials science , subthreshold conduction , transistor , optoelectronics , threshold voltage , voltage , low voltage , field effect transistor , acceptor , electrical engineering , condensed matter physics , physics , engineering
Abstract Organic field‐effect transistors suffer from ultra‐high operating voltages in addition to their relative low mobility. A general approach to low‐operating‐voltage organic field‐effect transistors (OFETs) using donor/acceptor buffer layers is demonstrated. P‐type OFETs with acceptor molecule buffer layers show reduced operating voltages (from 60–100 V to 10–20 V), with mobility up to 0.19 cm 2 V −1 s −1 and an on/off ratio of 3 × 10 6 . The subthreshold slopes of the devices are greatly reduced from 5–12 V/decade to 1.68–3 V/decade. This favorable combination of properties means that such OFETs can be operated successfully at voltages below 20 V (| V DS | ≤ 20 V, | V GS | ≤ 20 V). This method also works for n‐type semiconductors. The reduced operating voltage and low pinch‐off voltage contribute to the improved ordering of the polycrystalline films, reduced grain boundary resistance, and steeper subthreshold slopes.