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Enhanced Emission of (In, Ga) Nitride Nanowires Embedded with Self‐Assembled Quantum Dots
Author(s) -
Hsu ChihWei,
Ganguly Abhijit,
Liang ChiHui,
Hung YuTing,
Wu ChienTing,
Hsu GengMing,
Chen YangFang,
Chen ChiaChun,
Chen KueiHsien,
Chen LiChyong
Publication year - 2008
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200700739
Subject(s) - materials science , nanowire , photoluminescence , quantum dot , ternary operation , raman spectroscopy , transmission electron microscopy , optoelectronics , microstructure , nitride , nanotechnology , composite material , optics , physics , computer science , programming language , layer (electronics)
We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self‐assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH 3 via a vapor–liquid–solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In‐rich or Ga‐rich ternary NWs have been produced. X‐ray diffraction, Raman studies and transmission electron microscopy reveal a phase‐separated microstructure wherein the isovalent heteroatoms are self‐aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In‐rich and Ga‐rich NWs. Temperature‐dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga‐rich NWs to their embedded SAQDs. A multi‐level band schema is proposed for the case of In‐rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.