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Extremely Low‐Threshold Amplified Spontaneous Emission of 9,9′‐Spirobifluorene Derivatives and Electroluminescence from Field‐Effect Transistor Structure
Author(s) -
Nakanotani H.,
Akiyama S.,
Ohnishi D.,
Moriwake M.,
Yahiro M.,
Yoshihara T.,
Tobita S.,
Adachi C.
Publication year - 2007
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200700069
Subject(s) - materials science , electroluminescence , optoelectronics , oled , doping , diode , carbazole , active layer , transistor , layer (electronics) , thin film transistor , photochemistry , nanotechnology , voltage , electrical engineering , chemistry , engineering
By doping 2,7‐bis[4‐( N ‐carbazole)phenylvinyl]‐9,9′‐spirobifluorene (spiro‐SBCz) into a wide energy gap 4,4′‐bis(9‐carbazole)‐2,2′‐biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of E th = (0.11 ± 0.05) μJ cm –2 (220 W cm –2 ) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro‐SBCz thin film functions as an active light emitting layer in organic light‐emitting diode (OLED) and a field‐effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.