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Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions
Author(s) -
Lee J. H.,
Wang Z. M.,
Black W. T.,
Kunets V. P.,
Mazur Y. I.,
Salamo G. J.
Publication year - 2007
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200700066
Subject(s) - quantum dot , molecular beam epitaxy , materials science , monolayer , trench , condensed matter physics , epitaxy , optoelectronics , nanotechnology , layer (electronics) , physics
Abstract We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based on the underlying science, this growth approach enables the localization of InAs QDs on GaAs (100) by controlling the sidewall facets and InAs monolayer coverage.