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Chalcogenide Glasses Based on Germanium Disulfide for Second Harmonic Generation
Author(s) -
Guignard M.,
Nazabal V.,
Smektala F.,
Adam J.L.,
Bohnke O.,
Duverger C.,
Moréac A.,
Zeghlache H.,
Kudlinski A.,
Martinelli G.,
Quiquempois Y.
Publication year - 2007
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200700047
Subject(s) - poling , materials science , chalcogenide , anode , raman spectroscopy , germanium , ion , second harmonic generation , chalcogenide glass , analytical chemistry (journal) , optoelectronics , optics , dielectric , chemistry , electrode , laser , physics , organic chemistry , chromatography , silicon , ferroelectricity
High second‐order susceptibilities are created by thermal poling in bulk germanium disulfide based chalcogenide glasses. Experimental conditions of the poling treatment (temperature, voltage, time) were optimized for each glass composition. The second‐order nonlinear signals were recorded by using the Maker fringes experiment and a second‐order coefficient χ (2) up to 8 pm V –1 was measured in the Ge 25 Sb 10 S 65 glass. This value is obtained using a simulation based on accurate knowledge of the thickness of the nonlinear layer. Two mechanisms are proposed to explain the creation of a nonlinear layer under the anode: the formation and the migration of charged defects towards the anode may mainly occur in Ge 20 Ga 5 Sb 10 S 65 and Ge 25 Ga 5 S 70 glasses, whereas the migration of Na + ions towards the cathode may be responsible for the accumulation of negative charges under the anode in Ge 33 S 67 and Ge 25 Sb 10 S 65 glasses. Different electronic conductivity behaviors seem to be at the origin of the phenomenon. In parallel, the potential effect of the poling treatment on the structural and electronic properties is studied using Raman spectroscopy and secondary ion mass spectroscopy measurements.