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Tough, Semiconducting Polyethylene‐poly(3‐hexylthiophene) Diblock Copolymers
Author(s) -
Müller C.,
Goffri S.,
Breiby D. W.,
Andreasen J. W.,
Chanzy H. D.,
Janssen R. A. J.,
Nielsen M. M.,
Radano C. P.,
Sirringhaus H.,
Smith P.,
StingelinStutzmann N.
Publication year - 2007
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200601248
Subject(s) - materials science , copolymer , polyethylene , moiety , flexibility (engineering) , phase (matter) , polymer , toughness , ultimate tensile strength , composite material , polymer chemistry , organic chemistry , chemistry , statistics , mathematics
Semiconducting diblock copolymers of polyethylene (PE) and regioregular poly(3‐hexylthiophene) (P3HT) are demonstrated to exhibit a rich phase behaviour, judicious use of which permitted us to fabricate field‐effect transistors that show saturated charge carrier mobilities, μ FET , as high as 2 × 10 –2 cm 2 V –1 s –1 and ON‐OFF ratios, I on / I off ∼ 10 5 at contents of the insulating PE moiety as high as 90 wt %. In addition, the diblock copolymers display outstanding flexibility and toughness with elongations at break exceeding 600 % and true tensile strengths around 70 MPa, opening the path towards robust and truly flexible electronic components.