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Benzodithiophene Copolymer—A Low‐Temperature, Solution‐Processed High‐Performance Semiconductor for Thin‐Film Transistors
Author(s) -
Pan H.,
Wu Y.,
Li Y.,
Liu P.,
Ong B. S.,
Zhu S.,
Xu G.
Publication year - 2007
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200601242
Subject(s) - materials science , copolymer , thin film transistor , annealing (glass) , semiconductor , thin film , transistor , optoelectronics , field effect transistor , polymer , nanotechnology , composite material , electrical engineering , engineering , layer (electronics) , voltage
Abstract Poly(4,8‐didodecyl‐2,6‐bis‐(3‐methylthiophen‐2‐yl)‐benzo[1,2‐ b :4,5‐ b ′]dithiophene) self‐assembled on appropriate substrates from solution and formed highly structured thin films at low temperatures. As an as‐prepared thin‐film semiconductor without thermal annealing, it exhibited excellent field‐effect transistor properties with mobility of ∼ 0.15 cm 2 V –1 s –1 in thin‐film transistors.