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A New Route to Large‐Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum
Author(s) -
Xu X.,
Wang Y.,
Liu Z.,
Zhao R.
Publication year - 2007
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200600658
Subject(s) - materials science , nanowire , disproportionation , silicon , nanotechnology , crystal (programming language) , oxide , silicon oxide , silicon nanowires , ultra high vacuum , chemical engineering , nanoscopic scale , optoelectronics , catalysis , organic chemistry , metallurgy , chemistry , silicon nitride , computer science , engineering , programming language
An approach for the large‐scale synthesis of high‐purity silicon nanowires (SiNWs) in ultrahigh vacuum is presented. A mixture of Si and SiO 2 is evaporated by an electron beam, and the growth temperature is 700 °C, which is much lower than those used for other oxide‐assisted growths. A new type of single‐crystal SiNWs, with [221] orientation, is thus synthesized. Moreover, it is experimentally demonstrated that SiO intermediates are formed in the process, and the nanowires are obtained via a disproportionation reaction of 2SiO → Si + SiO 2 . A growth mechanism is proposed and the critical factors for the formation of 1D nanowires are also determined. The approach is particularly compatible with the mature Si‐based technology, and is favorable for device integration and practical applications.