Template Growth of Nanocrystalline PbS, CdS, and ZnS on a Polydiacetylene Langmuir Film: An In Situ Grazing Incidence X‐ray Diffraction Study | Zendy

Lifshitz Y. | Zendy; Konovalov O. | Zendy; Belman N. | Zendy; Berman A. | Zendy; Golan Y. | Zendy

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Template Growth of Nanocrystalline PbS, CdS, and ZnS on a Polydiacetylene Langmuir Film: An In Situ Grazing Incidence X‐ray Diffraction Study

Author(s) -

Lifshitz Y.,

Konovalov O.,

Belman N.,

Berman A.,

Golan Y.

Publication year - 2006

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.200600020

Subject(s) - materials science , nanocrystalline material , nanocrystal , diffraction , chemical bath deposition , in situ , zinc , semiconductor , thin film , crystallography , nanotechnology , chemical engineering , optics , optoelectronics , metallurgy , organic chemistry , chemistry , physics , engineering

Chemical deposition of nanocrystalline PbS, CdS, and ZnS at the air/solution interface in the absence and presence of a polydiacetylene (PDA) Langmuir film is investigated in situ using grazing incidence X‐ray diffraction. In all cases, it is found that PDA has a pronounced effect on the incipient semiconductor nanocrystals (NCs). In the presence of PDA, PbS NCs showed a <111> orientation in addition to the commonly obtained <100> growth direction of the PbS rock salt structure while CdS and ZnS NCs crystallized in the zinc blende polymorph with a predominant <100> orientation. ZnS NCs were obtained only in the presence of PDA at the air/solution interface.

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