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Inside Front Cover: Oxidation Conditions for Octadecyl Trichlorosilane Monolayers on Silicon: A Detailed Atomic Force Microscopy Study of the Effects of Pulse Height and Duration on the Oxidation of the Monolayer and the Underlying Si Substrate (Adv. Funct. Mater. 6/2005)
Author(s) -
Wouters D.,
Willems R.,
Hoeppener S.,
Flipse C. F. J.,
Schubert U. S.
Publication year - 2005
Publication title -
advanced functional materials
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200590021
Subject(s) - trichlorosilane , monolayer , silicon , materials science , silicon dioxide , nanolithography , substrate (aquarium) , nanotechnology , self assembled monolayer , optoelectronics , chemical engineering , analytical chemistry (journal) , composite material , chemistry , fabrication , organic chemistry , medicine , oceanography , alternative medicine , pathology , geology , engineering
Schubert and co‐workers have performed a detailed atomic force microscopy study to establish and characterize the oxidation conditions of self‐assembled monolayers of octadecyl trichlorosilane on silicon substrates. The cover image illustrates different examples of surfaces that were structured with different patterning conditions, as reported on p. 938. The graph in the background depicts three observed oxidation regimes depending on applied voltage and oxidation time. In current scanning‐probe nanolithography research, substrates consisting of octadecyl trichlorosilane monolayers on silicon are often used. On one hand, the presence of an organic monolayer can be used as a passive resist, influencing the formation of silicon dioxide on the substrate, whereas in other cases the monolayer itself is patterned, creating local chemical functionality. In this study we investigate the time scales involved in either process. By looking at friction and height images of lines oxidized at different bias voltages and different pulse durations, we have determined the parameter space in which the formation of silicon dioxide is dominant as well as the region in which the oxidation of the monolayer itself is dominant.