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Deep‐UV Photochemistry and Patterning of (Aminoethylaminomethyl)phenethylsiloxane Self‐Assembled Monolayers
Author(s) -
Chen M.S.,
Dulcey C. S.,
Chrisey L. A.,
Dressick W. J.
Publication year - 2006
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200500744
Subject(s) - photodegradation , monolayer , photochemistry , photodissociation , cleavage (geology) , self assembled monolayer , amine gas treating , materials science , bond cleavage , degradation (telecommunications) , selectivity , quantum yield , catalysis , photocatalysis , chemistry , organic chemistry , nanotechnology , fluorescence , telecommunications , physics , quantum mechanics , fracture (geology) , computer science , composite material
The 193 nm photochemistry of (aminoethylaminomethyl)phenethylsiloxane (PEDA) self‐assembled monolayers (SAMs) under ambient conditions is described. The primary photodegradation pathways at low exposure doses (< 100 mJ cm –2 ) are benzylic C–N bond cleavage (ca. 68 %), with oxidation of the benzyl C to the aldehyde, and Si–C bond cleavage (ca. 32 %). Amine‐containing photoproducts released from the SAM during exposure remain physisorbed on the surface, where they undergo secondary photolysis leading to their complete degradation and removal after ca. 1200 mJ cm –2 . NaCl(aq) post‐exposure rinsing removes the physisorbed materials, showing that degradation of the original PEDA species (leaving Si–OH) is substantially complete after ca. 450 mJ cm –2 . Consequently, patterned, rinsed PEDA SAMs function as efficient templates for fabrication of high‐resolution, negative‐tone, electroless metal and DNA features with good selectivity at low dose (i.e., ca. 400 mJ cm –2 ) via materials grafting to the intact amines remaining in the unirradiated PEDA SAM regions.