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Low‐Temperature Formation of Well‐Aligned Nanocrystalline Si/SiO x Composite Nanowires
Author(s) -
Wong T.C.,
Yu C.C.,
Wu J.J.
Publication year - 2005
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200400307
Subject(s) - materials science , nanowire , nanocrystalline material , amorphous solid , composite number , chemical vapor deposition , nanocrystal , photoluminescence , nanotechnology , nanocrystalline silicon , vapor–liquid–solid method , chemical engineering , silicon , amorphous silicon , composite material , optoelectronics , crystalline silicon , crystallography , chemistry , engineering
Well‐aligned nanocrystalline (nc)‐Si/SiO x composite nanowires have been deposited on various substrates at 120 °C using SiCl 4 /H 2 in a hot‐filament chemical vapor deposition reactor. Structural and compositional analyses reveal that silicon nanocrystals are embedded in the amorphous SiO x nanowires. The nc‐Si/SiO x composite nanowires are transparent in the range 500–900 nm. Photoluminescence spectra of the nc‐Si/SiO x composite nanowires have a broad emission band, ranging from 420 to 525 nm. Water vapor from the chamber wall plays a crucial role in the formation of the well‐aligned nanowires. A possible mechanism for the formation of the composite nanowires is suggested.
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