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Single‐Crystalline Films of the Homologous Series InGaO 3 (ZnO) m Grown by Reactive Solid‐Phase Epitaxy
Author(s) -
Ohta H.,
Nomura K.,
Orita M.,
Hirano M.,
Ueda K.,
Suzuki T.,
Ikuhara Y.,
Hosono H.
Publication year - 2003
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200390020
Subject(s) - materials science , epitaxy , bilayer , amorphous solid , annealing (glass) , thin film , homologous series , substrate (aquarium) , layer (electronics) , cubic zirconia , crystallography , chemical engineering , yttria stabilized zirconia , optoelectronics , nanotechnology , composite material , ceramic , chemistry , biochemistry , oceanography , membrane , geology , engineering
Single‐crystalline thin films of the homologous series InGaO 3 (ZnO) m (where m is an integer) are fabricated by the reactive solid‐phase epitaxy (R‐SPE) method. Specifically, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified. High‐temperature annealing of bilayer films consisting of an amorphous InGaO 3 (ZnO) 5 layer deposited at room temperature and an epitaxial ZnO layer on yttria‐stabilized zirconia (YSZ) substrate allows for the growth of single‐crystalline film with controlled chemical composition. The epitaxial ZnO thin layer plays an essential role in determining the crystallographic orientation, while the ratio of the thickness of both layers controls the film composition.