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Atomic Layer Deposition of TiO 2 Thin Films on Mixed Self‐Assembled Monolayers Studied as a Function of Surface Free Energy
Author(s) -
Lee J.P.,
Jang Y.J.,
Sung M.M.
Publication year - 2003
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.200304445
Subject(s) - monolayer , atomic layer deposition , materials science , self assembled monolayer , surface energy , deposition (geology) , layer (electronics) , thin film , free surface , chemical engineering , nanotechnology , titanium , composite material , metallurgy , paleontology , physics , quantum mechanics , sediment , biology , engineering
Mixed self‐assembled monolayers (SAMs) with different ratios of –OH to –CH 3 groups were used to modify the surface free energies of the Si substrates from 64 to 29 mN m –1 . The TiO 2 thin films were grown on the mixed SAM‐coated Si substrates by atomic layer deposition (ALD) from titanium isopropoxide and water. A two‐dimensional growth mode is observed on the SAMs‐coated substrates possessing high surface free energies. As the surface free energy decreases, a three‐dimensional growth mode begins to dominate. These observations indicate that the mixed SAMs can control the growth modes of the atomic layer deposition by modifying of the surface free energies of the substrates.