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Impact of Laser Treatment on Hydrogenated Amorphous Silicon Properties
Author(s) -
Maurer Claudia,
Beyer Wolfhard,
Hülsbeck Markus,
Breuer Uwe,
Rau Uwe,
Haas Stefan
Publication year - 2020
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201901437
Subject(s) - materials science , amorphous silicon , silicon , amorphous solid , hydrogen , laser , optoelectronics , irradiation , nanocrystalline silicon , layer (electronics) , crystalline silicon , nanotechnology , optics , crystallography , chemistry , physics , organic chemistry , nuclear physics
Herein, the application of laser radiation to locally modify the hydrogen distribution within hydrogenated amorphous silicon films on a short time scale is studied. The impact of laser power and irradiation time on the temperature of the silicon layer during the laser treatment and the hydrogen outdiffusion is analyzed. Moreover, the resulting optoelectronic properties of the amorphous silicon are examined. On a timescale of a few seconds or less, the hydrogen concentration in the near‐surface region of the silicon layer can be successfully decreased without major impact on the optoelectronic properties.