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Nonstoichiometric Oxygen‐Dependent Microstructures and Phase Transitions in Post‐Annealed Vanadium Dioxides
Author(s) -
Wang Shuxia,
Wei Wei,
Huang Tiantian,
Zhang Tianning,
Chen Zhimin,
Chen Xin,
Dai Ning
Publication year - 2019
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201801374
Subject(s) - materials science , vanadium , microstructure , oxygen , stoichiometry , nanoscopic scale , metal–insulator transition , nanotechnology , thin film , phase transition , phase (matter) , chemical physics , chemical engineering , metal , metallurgy , condensed matter physics , chemistry , physics , organic chemistry , engineering
Vanadium dioxide (VO 2 ) has a metal‐insulator transition (MIT) near room temperature and has attracted considerable interest in both the fundamental science and technological application communities. It is a challenging goal to facilitate a phase transition in complex vanadium oxides by manipulating the stoichiometry. More importantly, the specific hypoxic or hyperoxic microstructure phases simultaneously form when nonstoichiometric oxygen changes in the vanadium dioxides. Here, it is presented that the nonstoichiometric oxygen‐dependent microstructure, bandgap and MITs in post‐annealed VO 2 thin films with V 6 O 11 and V 6 O 13 phases at the nanoscale. With an increase in nonstoichiometric oxygen, both the bandgap energies and the phase transition temperatures simultaneously increase. Controlling the hypoxic and hyperoxic states at the nanoscale is an alternative way to explore and manipulate MIT behaviors that depend on the microstructure and composition. It is believed that the dual perspectives help to both understand the underlying physical mechanism of collaborative MITs and construct functional Mott transistors based on multivalent VO 2 thin films.