Premium
On the Wetting States of Low Melting Point Metal Galinstan® on Silicon Microstructured Surfaces
Author(s) -
Davis Ethan,
Ndao Sidy
Publication year - 2018
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201700829
Subject(s) - wetting , materials science , contact angle , silicon , melting point , liquid metal , substrate (aquarium) , surface energy , indium , gallium , composite material , nanotechnology , optoelectronics , metallurgy , oceanography , geology
The primary goal of this article is to measure the wetting characteristics of a low melting point metal to determine the efficacy of this type of material for possible use in thermal energy storage applications. Galinstan®, a commercially available alloy consisting of Gallium, Indium, and Tin is subjected to contact angle measurements on various silicon surfaces at varying temperatures. Due to the oxidation characteristics of Galinstan, all experiments are conducted in an inert nitrogen environment (<0.5 ppm oxygen) to maintain fluid‐like properties. This work finds that although contact angle changes with substrate and surface structure, temperature has no observable effect on contact angle. Contact angles range from 141° on smooth silicon to greater than 160° on silicon micropillars. Although a temperature dependence is not observed over the range of temperatures studied, having wetting properties of Galinstan on various surfaces is a step toward better understanding the capabilities of this and similar materials in energy management.