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A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films
Author(s) -
Vervaele Mattias,
De Roo Bert,
Debehets Jolien,
Sousa Marilyne,
Zhang Luman,
Van Bilzen Bart,
Seré Stephanie,
Guillon Herve,
Rajala Markku,
Seo Jin Won,
Locquet JeanPierre
Publication year - 2017
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201700193
Subject(s) - thin film , materials science , chemical vapor deposition , combustion chemical vapor deposition , auger electron spectroscopy , ellipsometry , tetraethyl orthosilicate , deposition (geology) , analytical chemistry (journal) , fourier transform infrared spectroscopy , electron beam physical vapor deposition , plasma enhanced chemical vapor deposition , carbon film , chemical engineering , nanotechnology , chemistry , organic chemistry , paleontology , physics , sediment , nuclear physics , engineering , biology
In this work, the use of a newly developed direct liquid injection low pressure chemical vapor deposition (DLI‐LPCVD) system is described, which allows for the deposition of thin films in a controlled and reproducible manner. The capabilities of this system are described via silica thin films deposited using the precursor tetraethyl orthosilicate (TEOS). The deposition of thin films is controlled by parameters, such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. The thickness of the deposited layer is varied simply by changing deposition temperature and time. X‐ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature and time. Auger electron spectroscopy, in addition, motivates our choice to use cyclohexane as a solvent. A growth rate of 12.2 Å min −1 is obtained. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown by the newly developed DLI‐LPCVD system. This system can be used for a wide range of films by varying the precursors.