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Stress and Induced Electric Polarization Modeling in Polar, Semi‐polar, and Non‐Polar AlGaN/GaN Heterostructures for Piezotronics Application
Author(s) -
Paszkiewicz Bartłomiej K.
Publication year - 2017
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201600712
Subject(s) - heterojunction , materials science , polarization (electrochemistry) , optoelectronics , polar , electric field , transistor , wide bandgap semiconductor , engineering physics , voltage , physics , electrical engineering , engineering , chemistry , quantum mechanics , astronomy
Author developed a comprehensive model that allows analysis of polarization states inside AlGaN/GaN heterostructures with a special attention devoted to its applications in piezotronics field. The model enables prediction of polarization and stress states inside a heterostructure with arbitrary chosen Al content and of any crystallographic orientation. This is an issue of great importance for piezotronics devices development for both applications: sensor technology Strain Gated Transistors. In the model an approach focused on a layer matching process at nanoscale is applied. Thanks to this it is possible to describe polarization states in heterostructure in technology agnostic way. In this paper, method for predicting polarization states and stress states in AlGaN/GaN heterostructure is presented.