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Influence of Substrate Temperature on LPCVD ZnO Thin Film and Cu(In, Ga)Se 2 Thin Film Solar Cells
Author(s) -
Guo Yuting,
Zhu Hongbing,
Niu Xiaona,
Zhang Wen,
Li Zhiqiang,
Chen Jingwei,
Mai Yaohua
Publication year - 2016
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201600113
Subject(s) - copper indium gallium selenide solar cells , materials science , thin film , chemical vapor deposition , gallium , substrate (aquarium) , indium , solar cell , optoelectronics , chemical engineering , nanotechnology , metallurgy , oceanography , geology , engineering
Zinc oxide (ZnO) thin films are deposited at different substrate temperatures (T sub ) by low‐pressure chemical vapor deposition (LPCVD) technique. The influence of T sub on the properties of LPCVD ZnO and the performance of copper indium gallium di‐selenide (Cu(In, Ga)Se 2 , CIGS) thin films are systematically investigated. The highest efficiency of 11.7% is achieved for CIGS thin film solar cells with LPCVD ZnO thin film window layers deposited at 119 °C. In addition, a thermal treatment at 104 °C before the ZnO deposition results in a pronounced efficiency enhancement, and achieved a high efficiency of 14.4% in CIGS solar cell with the structure of glass/Mo/CIGS absorber/CdS/i‐ZnO/n‐ITO/Al grid.