Influence of Substrate Temperature on LPCVD ZnO Thin Film and Cu(In, Ga)Se 2  Thin Film Solar Cells | Zendy

Guo Yuting | Zendy; Zhu Hongbing | Zendy; Niu Xiaona | Zendy; Zhang Wen | Zendy; Li Zhiqiang | Zendy; Chen Jingwei | Zendy; Mai Yaohua | Zendy

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Influence of Substrate Temperature on LPCVD ZnO Thin Film and Cu(In, Ga)Se 2 Thin Film Solar Cells

Author(s) -

Guo Yuting,

Zhu Hongbing,

Niu Xiaona,

Zhang Wen,

Li Zhiqiang,

Chen Jingwei,

Mai Yaohua

Publication year - 2016

Publication title -

advanced engineering materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.938

H-Index - 114

eISSN - 1527-2648

pISSN - 1438-1656

DOI - 10.1002/adem.201600113

Subject(s) - copper indium gallium selenide solar cells , materials science , thin film , chemical vapor deposition , gallium , substrate (aquarium) , indium , solar cell , optoelectronics , chemical engineering , nanotechnology , metallurgy , oceanography , geology , engineering

Zinc oxide (ZnO) thin films are deposited at different substrate temperatures (T sub ) by low‐pressure chemical vapor deposition (LPCVD) technique. The influence of T sub on the properties of LPCVD ZnO and the performance of copper indium gallium di‐selenide (Cu(In, Ga)Se 2 , CIGS) thin films are systematically investigated. The highest efficiency of 11.7% is achieved for CIGS thin film solar cells with LPCVD ZnO thin film window layers deposited at 119 °C. In addition, a thermal treatment at 104 °C before the ZnO deposition results in a pronounced efficiency enhancement, and achieved a high efficiency of 14.4% in CIGS solar cell with the structure of glass/Mo/CIGS absorber/CdS/i‐ZnO/n‐ITO/Al grid.

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