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Solid‐State Reactions of SiC/W–25Re Alloy and Thermal Stability of SiC/Ti/W–25Re Alloy under High‐Temperature Annealing
Author(s) -
Han Jun Sae,
Jang Seung Sik,
Park Dong Yong,
Oh Yong Jun,
Park Seong Jin
Publication year - 2016
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201500660
Subject(s) - materials science , alloy , annealing (glass) , microstructure , thermal stability , metallurgy , layer (electronics) , composite material , chemical engineering , engineering
Solid‐state reactions of SiC/W–25Re alloy and SiC/Ti/W–25Re alloy are investigated under the high‐temperature annealing at1 500 °C. The interface reaction layer between SiC and W–25Re alloy is composed of WC– WSi 2 – W 5 Si 3 – W–Re sigma phase – dendrite microstructure. Solid‐state reactions between W and SiC form two types of W‐silicides and the relative depletion of W brings formation of the W–Re sigma phase. In order to prevent direct interfacial reactions, Ti layer is intercalated as a secondary buffer layer. Compared to the original interface, thicknesses of both reaction layer and dendrite layer are significantly decreased. Although the thermal reaction of Ti and W brings inhomogeneous characteristics, the proposed functionally graded structure is expected to enhance the thermal stability.