Premium
TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices
Author(s) -
Banerjee Sayanti,
Löffler Markus,
Muehle Uwe,
Berent Katarzyna,
Heinzig André,
Trommer Jens,
Weber Walter,
Zschech Ehrenfried
Publication year - 2016
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201400577
Subject(s) - materials science , nanowire , silicon nanowires , silicon , schottky barrier , schottky diode , optoelectronics , nanotechnology , engineering physics , engineering , diode
The physical and electrical properties of a silicon nanowire reconfigurable field effect transistor (RFETs) are determined by the Schottky junction between the participating phases. TEM studies on such junctions require a careful FIB‐based target preparation of thin lamellae with minimal ion‐beam induced damage. In the current study, the nickel silicide phase forming the Schottky junction with silicon is identified using EDX in the TEM, considering a calibration based on the Fourier transforms of the HRTEM micrographs of known diffraction patterns of the nickel silicide phases. The TEM lamellae are prepared using the so‐called lift‐out technique and low voltage Ga + ion polishing to minimize the near‐surface amorphization. The structural and compositional data of the nickel silicide phase are needed for engineering the Schottky junction and corresponding theoretical modeling.