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Self‐Catalytic Growth of β‐Ga 2 O 3 Nanostructures by Chemical Vapor Deposition
Author(s) -
Kumar Sudheer,
Tessarek Christian,
Sarau George,
Christiansen Silke,
Singh Rajendra
Publication year - 2015
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201400289
Subject(s) - materials science , cathodoluminescence , chemical vapor deposition , nanowire , nanostructure , monoclinic crystal system , raman spectroscopy , nanotechnology , selected area diffraction , transmission electron microscopy , luminescence , gallium , chemical engineering , analytical chemistry (journal) , crystallography , optoelectronics , crystal structure , optics , chemistry , physics , metallurgy , engineering , chromatography
In this work, we have studied the synthesis of single crystalline self‐catalyzed beta gallium oxide (β‐Ga 2 O 3 ) nanostructures by chemical vapor deposition technique. We have adopted a new approach to grow the nanostructures instead of using conventional foreign metal nano‐catalyst based‐approaches. The as‐grown nanostructures including nanowires and nanosheets (NSHs) were grown on spin‐coated Ga 2 O 3 films. The structural studies such as X‐ray diffraction, Raman and transmission electron microscope (TEM) investigations on the nanostructures showed monoclinic phase of Ga 2 O 3 and single crystalline structure. Furthermore, high‐resolution TEM with a selected area electron diffraction pattern recorded on a single β‐Ga 2 O 3 nanowire and nanosheet verified their single crystalline nature, having [001] as favorable growth direction. The energy dispersive X‐ray spectroscopy‐elemental mapping of as‐grown nanostructures indicated uniform distribution of Ga and O. Cathodoluminescence imaging and spectrum revealed excellent luminescence characteristics of nanostructures with a broad UV‐blue emission band (1.80–4.20 eV nm) centered at 2.64 eV. This study also highlights the growth mechanism of NSHs. These β‐Ga 2 O 3 nanostructures have great potential in nanofunctional devices.