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ZnSe‐Based Longitudinal Twinning Nanowires
Author(s) -
Xu Jing,
Lu Aijiang,
Wang Chunrui,
Zou Rujia,
Liu Xiaoyun,
Wu Xing,
Wang Yuxi,
Li Sijia,
Sun Litao,
Chen Xiaoshuang,
Oh Hongseok,
Baek Hyeonjun,
Yi GyuChul,
Chu Junhao
Publication year - 2014
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201300405
Subject(s) - crystal twinning , nanowire , wurtzite crystal structure , materials science , photoluminescence , transmission electron microscopy , raman spectroscopy , high resolution transmission electron microscopy , zinc , nanotechnology , optoelectronics , condensed matter physics , microstructure , optics , composite material , metallurgy , physics
Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high‐resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as‐grown longitudinal twinning nanowire are investigated by room‐temperature Raman and low‐temperature (10 K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope .