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Thermal Conductivity of ZrB 2 SiCB 4 C from 25 to 2000 °C
Author(s) -
Peng Fei,
Erdman Rebecca,
Van Laningham Gregg,
Speyer Robert F.,
Campbell Robert
Publication year - 2013
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.201200298
Subject(s) - materials science , thermal conductivity , microstructure , laser flash analysis , phase (matter) , sintering , analytical chemistry (journal) , composite material , thermal diffusivity , thermal , thermodynamics , chemistry , physics , organic chemistry , chromatography
The thermal diffusivities of ZrB 2 –SiC (10.7, 21.9, or 48.7 vol% SiC) with B 4 C sintering aid were measured over 25–2000 °C using laser flash. The composition with the highest SiC showed the highest thermal conductivity ( k ) at 25 °C, but the lowest above ≈400 °C, because of the greater k temperature sensitivity of the SiC phase. Finite difference calculations of k , using selected literature data for the individual phases, and the concentration of phases from microstructures, correctly predicted temperature and phase concentration dependencies, but were lower than experimental results. The k of pure ZrB 2 and SiC as a function of temperature were back‐calculated from the experimental results for the multi‐phase materials; they were in good agreement with specific literature values.