Premium
Atomic Layer Deposition of High‐ k Oxides of the Group 4 Metals for Memory Applications (Adv. Eng. Mater. 4/2009)
Author(s) -
Niinistö Jaakko,
Kukli Kaupo,
Heikkilä Mikko,
Ritala Mikko,
Leskelä Markku
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200990008
Subject(s) - atomic layer deposition , materials science , yttrium , layer (electronics) , high κ dielectric , group (periodic table) , dielectric , deposition (geology) , nanotechnology , thin film , chemical engineering , optoelectronics , metallurgy , oxide , chemistry , organic chemistry , paleontology , sediment , engineering , biology
The cover shows high temperature XRD patterns of a 5.8 nm thick HfO 2 film and 7.3 nm yttrium‐doped HfO 2 grown by atomic layer deposition (ALD). More details can be found in the article of J. Niinistö et al. where recent development in ALD of high‐k dielectric oxides for memory applications is reviewed on page 223 .