Premium
In‐Situ Studies of ALD Growth of Hafnium Oxide Films
Author(s) -
Karavaev Konstantin,
Kolanek Krzysztof,
Tallarida Massimo,
Schmeißer Dieter,
Zschech Ehrenfried
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800348
Subject(s) - materials science , atomic layer deposition , x ray photoelectron spectroscopy , in situ , thin film , substrate (aquarium) , hafnium , layer (electronics) , atomic force microscopy , analytical chemistry (journal) , nanotechnology , chemical engineering , metallurgy , chemistry , zirconium , oceanography , organic chemistry , chromatography , geology , engineering
We investigated in situ the atomic layer deposition is of the high‐ k dielectric material HfO 2 . We used X‐ray photoelectron spectroscopy and ultra high vacuum atomic force microscopy for characterizing both the thin film and the substrate. With this technique, we determined the growth and the chemical‐physical properties of the thin film.